DI023P10PT-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI023P10PT-AQ MOSFET, PowerQFN 3x3, P, -100V, -23A, 68mΩ, 175°C, AEC-Q101
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI023P10PT-AQ

Type	SMD
Package	PowerQFN 3x3
Qualification	AEC-Q101
Config	Single
Life Cycle	engineering sample
ESD sensitive	Yes
MSL	3

ESD protection	ESD protected	No
Polarity	pol	P
Drain source voltage	VDS	-100 V

Drain current 25°C	ID	-23 A
On-resistance 1	RDSon1	-0.068 Ω
	@ ID	-12 A
	@ VGS	-10 V
Drain current 100°C	ID	-16 A
On-resistance 2	RDSon2	0.085 Ω
	@ ID	-8 A
	@ VGS	-4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	42 W
	@ TLoc	25 °C
	Location	Junction
Avalanche	Yes
Peak drain current	IDM	-80 A
	@ tp	100 µs
Threshold voltage	VGSth min	-1.2 V
	VGSth max	-2.6 V
Turn-on delay time	tD(on)	8 ns
Rise time	tr	14 ns
Turn-off delay time	tD(off)	20 ns
Fall time	tf	13 ns
Total gate charge (10V)	Qg (10V)	22 nC
Total gate charge (4.5V)	Qg (4.5V)	10.7 nC
Gate-drain charge	Qgd	5 nC
Single pulse avalanche energy	Eas	103 mJ
Input capacitance	Ciss	1259 pF
Output capacitance	Coss	245 pF
Reverse transfer capacitance	Crss	11 pF
Reverse recovery charge	Qrr	119 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	3.5 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	62.5 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	80 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	20 mA/V
Intrinsic gate resistance	RGi	10 Ω