DI015N25D1
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI015N25D1 MOSFET, DPAK, N, 250V, 15A, 0.2Ω, 175°C
Minimum order quantity	2.500
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI015N25D1

Type	SMD
Package	TO-252AA/D-PAK
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	250 V

Drain current 25°C	ID	15 A
On-resistance 1	RDSon1	0.2 Ω
	@ ID	20 A
	@ VGS	10 V
Drain current 100°C	ID	9.4 A
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	nul V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	140 W
	@ TLoc	225 °C
	Location	Contact
Avalanche	No
Peak drain current	IDM	60 A
	@ tp	10000000 µs
Threshold voltage	VGSth min	3 V
	VGSth max	4.5 V
Turn-on delay time	tD(on)	4 ns
Rise time	tr	5 ns
Turn-off delay time	tD(off)	10 ns
Fall time	tf	2 ns
Total gate charge (10V)	Qg (10V)	8.9 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	0 nC
Single pulse avalanche energy	Eas	80 mJ
Input capacitance	Ciss	475 pF
Output capacitance	Coss	34 pF
Reverse transfer capacitance	Crss	0 pF
Reverse recovery charge	Qrr	110 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.32 g
Marking	Marking	Type
Thermal resistance junction	RTH	1.1 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	20 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	15 mA/V
Intrinsic gate resistance	RGi	tbd Ω

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