DI014N25D1-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI014N25D1-AQ MOSFET, DPAK, N, 250V, 15A, 0.28Ω, 150°C, AEC-Q101
Minimum order quantity	2.500
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI014N25D1-AQ

Type	SMD
Package	TO-252AA/D-PAK
Qualification	AEC-Q101
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	250 V

Drain current 25°C	ID	10 A
On-resistance 1	RDSon1	0.28 Ω
	@ ID	7 A
	@ VGS	10 V
Drain current 100°C	ID	9.4 A
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	nul V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	73.5 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	No
Peak drain current	IDM	28 A
	@ tp	10000000 µs
Threshold voltage	VGSth min	3 V
	VGSth max	4.5 V
Turn-on delay time	tD(on)	13 ns
Rise time	tr	29 ns
Turn-off delay time	tD(off)	11 ns
Fall time	tf	9.6 ns
Total gate charge (10V)	Qg (10V)	16 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	0 nC
Single pulse avalanche energy	Eas	9.9 mJ
Input capacitance	Ciss	627 pF
Output capacitance	Coss	55 pF
Reverse transfer capacitance	Crss	12 pF
Reverse recovery charge	Qrr	951 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.32 g
Marking	Marking	Type
Thermal resistance junction	RTH	1.7 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	50 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	16 V
Drain source leakage current	IDSS	1 µA
	@ VDS	20 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	6 mA/V
Intrinsic gate resistance	RGi	2.4 Ω