DI013P06PT-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI013P06PT-AQ MOSFET, PowerQFN 3x3, P, -60V, -12.5A, 70mΩ, 175°C, AEC-Q101
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI013P06PT-AQ

Type	SMD
Package	PowerQFN 3x3
Qualification	AEC-Q101
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	P
Drain source voltage	VDS	-60 V

Drain current 25°C	ID	-12.5 A
On-resistance 1	RDSon1	0.07 Ω
	@ ID	-10 A
	@ VGS	-5.7 V
Drain current 100°C	ID	-8.8 A
On-resistance 2	RDSon2	0.095 Ω
	@ ID	-4.4 A
	@ VGS	-4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	25 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	-36 A
	@ tp	10000 µs
Threshold voltage	VGSth min	-1.5 V
	VGSth max	-2.5 V
Turn-on delay time	tD(on)	9 ns
Rise time	tr	10 ns
Turn-off delay time	tD(off)	14 ns
Fall time	tf	3 ns
Total gate charge (10V)	Qg (10V)	16.7 nC
Total gate charge (4.5V)	Qg (4.5V)	7.6 nC
Gate-drain charge	Qgd	3 nC
Single pulse avalanche energy	Eas	14 mJ
Input capacitance	Ciss	980 pF
Output capacitance	Coss	50 pF
Reverse transfer capacitance	Crss	16 pF
Reverse recovery charge	Qrr	9 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	6 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	50 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	-48 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	5 mA/V
Intrinsic gate resistance	RGi	6.7 Ω