DI012N10PQK2
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI012N10PQK2 MOSFET, PowerQFN 5x6-Dual, N+N,100V, 12A, 100mΩ, 175°C,
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI012N10PQK2

Type	SMD
Package	PowerQFN 5x6-Dual
Qualification	Commercial Grade
Config	Dual Protected
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N+N
Drain source voltage	VDS	100 V

Drain current 25°C	ID	12 A
On-resistance 1	RDSon1	0.1 Ω
	@ ID	5 A
	@ VGS	10 V
Drain current 100°C	ID	8.4 A
On-resistance 2	RDSon2	0.115 Ω
	@ ID	3 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	25 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	48 A
	@ tp	10 µs
Threshold voltage	VGSth min	1 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	12 ns
Rise time	tr	3 ns
Turn-off delay time	tD(off)	12 ns
Fall time	tf	2 ns
Total gate charge (10V)	Qg (10V)	24.6 nC
Total gate charge (4.5V)	Qg (4.5V)	12 nC
Gate-drain charge	Qgd	5 nC
Single pulse avalanche energy	Eas	20 mJ
Input capacitance	Ciss	1048 pF
Output capacitance	Coss	31 pF
Reverse transfer capacitance	Crss	22 pF
Reverse recovery charge	Qrr	27 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	6 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	70 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	10 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	100 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	2000 V
Forward transconductance	gfs	8.5 mA/V
Intrinsic gate resistance	RGi	1.1 Ω