DI005P04PW-Q
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI005P04PW-Q MOSFET, PowerQFN 2x2, P, -40V, -5.4A, 40mΩ, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	No
Halogen free	Yes

Article number	DI005P04PW-Q

Type	SMD
Package	PowerQFN 2x2
Qualification	AEC-Q compliant
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	1

ESD protection	ESD protected	No
Polarity	pol	P
Drain source voltage	VDS	-40 V

Drain current 25°C	ID	-5.4 A
On-resistance 1	RDSon1	0.04 Ω
	@ ID	-4 A
	@ VGS	-10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.055 Ω
	@ ID	-2 A
	@ VGS	-4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	2 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	-40 A
	@ tp	10000 µs
Threshold voltage	VGSth min	-1 V
	VGSth max	-2.5 V
Turn-on delay time	tD(on)	9 ns
Rise time	tr	27 ns
Turn-off delay time	tD(off)	14 ns
Fall time	tf	3 ns
Total gate charge (10V)	Qg (10V)	19 nC
Total gate charge (4.5V)	Qg (4.5V)	8.8 nC
Gate-drain charge	Qgd	3 nC
Single pulse avalanche energy	Eas	33 mJ
Input capacitance	Ciss	1078 pF
Output capacitance	Coss	80 pF
Reverse transfer capacitance	Crss	42 pF
Reverse recovery charge	Qrr	5 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.05 g
Marking	Marking	Type
Thermal resistance junction	RTH	13 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	62.5 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	16 V
Drain source leakage current	IDSS	1 µA
	@ VDS	32 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	17 mA/V
Intrinsic gate resistance	RGi	6 Ω