DI005N03PW-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI005N03PW-AQ MOSFET, PowerQFN 2x2, N, 30V, 5A, 20mΩ, 150°C, AEC-Q101
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI005N03PW-AQ

Type	SMD
Package	PowerQFN 2x2
Qualification	AEC-Q101
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	1

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	30 V

Drain current 25°C	ID	5 A
On-resistance 1	RDSon1	0.02 Ω
	@ ID	10 A
	@ VGS	10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.032 Ω
	@ ID	8 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	0.7 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	40 A
	@ tp	10000 µs
Threshold voltage	VGSth min	1 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	10 ns
Rise time	tr	17 ns
Turn-off delay time	tD(off)	10 ns
Fall time	tf	10 ns
Total gate charge (10V)	Qg (10V)	11.7 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	3 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	448 pF
Output capacitance	Coss	63 pF
Reverse transfer capacitance	Crss	40 pF
Reverse recovery charge	Qrr	2 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.05 g
Marking	Marking	NH
Thermal resistance junction	RTH	178 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	16 V
Drain source leakage current	IDSS	1 µA
	@ VDS	24 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	6 mA/V
Intrinsic gate resistance	RGi	1.7 Ω