2N5551
Bipolar Transistors

Product information

Product family	Bipolar Transistors Control and signal processing
Article description	2N5551 BJT, TO-92, 160V, 600mA, NPN, 0.625W, 150°C
Minimum order quantity	4.000
Stock	100.000
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	2N5551

Type	Wire-lead
Package	TO-92
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	n/a

Collector Emitter voltage	VCEO	160 V
DC Collector current	IC	1500 mA
Polarity	pol	NPN

Power dissipation	Ptot	0.625 W
	@ TLoc	25 °C
	Location	ambient
DC current gain	hfe	80
	@ VCE	5 V
	@ IC	10 mA
DC current gain (b)	hfe	30
	@ VCE	5 V
	@ IC	50 mA
DC current gain (c)	hfe	80
	@ VCE	5 V
	@ IC	1 mA
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Peak Collector Current	ICM	null A
Peak Base current	IBM	null mA
Collector Base voltage	VCBO	180 V
Emitter Base voltage	VEBO	6 V
Collector saturation voltage	VCEsat	200 mV
	@ IC	50 mA
	@ IB	5 mA
Base saturation voltage	VBEsat	null V
	@ IC	null mA
	@ IB	null mA
Base Emitter voltage	VBE	1.2 V
Collector Base cutoff current	ICBO	50 nA
Emitter Base cutoff current	IEBO	50 nA
Gain bandwidth product	ft	100 MHz
	@ IC	10 mA
	@ VCE	10 V
	@ f	100 MHz
Marking	Marking	Type
Thermal resistance junction	RTH	200 K/W
	Location	ambient
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Net weight	mnet	0.18 g
Case flammability	UL94-V0	No
UL recognized	UL-Recognition	null
Collector Base capacitance	CCBO	6 pF
	@ VCB	10 V
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C