MMDT5210W-Q
Digital Transistors

Product information

Product family	Digital Transistors Digital controls, signal processing
Article description	MMDT5210W-Q Biased BJT, SOT-323, NPN, 47kΩ, 0kΩ, 50V, 150°C
Minimum order quantity	3.000
Stock	0
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MMDT5210W-Q

Type	SMD
Package	SOT-323
Qualification	AEC-Q compliant
Config	Single 1R
Life Cycle	engineering sample
ESD sensitive	No
MSL	1

Polarity	pol	NPN
Resistor	R1	47000 Ω
	R2	null Ω

Collector Emitter voltage	VCEO	50 V
Collector Base voltage	VCBO	50 V
Emitter Base voltage	VEBO	6 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
DC Collector current	IC	100 mA
Peak Collector Current	ICM	null A
Power dissipation	Ptot	0.2 W
	@ TLoc	25 °C
	Location	Ambient
Thermal resistance junction	RTH	null K/W
	Location	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
DC current gain	hfe	null
	@ VCE	null V
	@ IC	null mA
DC current gain (b)	hfe	null
	@ VCE	null V
	@ IC	null mA
DC current gain (c)	hfe	null
	@ VCE	null V
	@ IC	null mA
Collector Base capacitance	CCBO	null pF
	@ VCB	null V
Collector saturation voltage	VCEsat	null mV
	@ IC	null mA
	@ IB	null mA
Input voltage on	VIon	null V
	@ VCE	null V
	@ IC	null mA
Input voltage off	VIoff	null V
	@ VCE	null V
	@ IC	null mA
Base Emitter voltage	VBE	null V
Collector Base cutoff current	ICBO	100 nA
Emitter Base cutoff current	IEBO	10 nA
Gain bandwidth product	ft	250 MHz
	@ IC	5 mA
	@ VCE	10 V
	@ f	100 MHz
Marking	Marking	A8
Net weight	mnet	0.01 g
Case flammability	UL94-V0	Yes
UL recognized	UL-Recognition	null
Storage temperature	Tsmin
	Tsmax

No records found.