MMBTRC110SS
Digital Transistors

Product information

Product family Digital Transistors
Digital controls, signal processing
Article description MMBTRC110SS
Biased BJT, SOT-23, NPN, 4.7kΩ, , 50V, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Distributor Availability

Technical data

Article number MMBTRC110SS
MMBTRC110SS Single 1R
Type SMD
Package SOT-23
Qualification Industrial Grade
Config Single 1R
Life Cycle active
ESD sensitive No
MSL 1
 
Polarity pol NPN
Resistor R1 4700
R2 null
Collector Emitter voltage VCEO 50 V
Collector Base voltage VCBO null V
Emitter Base voltage VEBO null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
DC Collector current IC 100 mA
Peak Collector Current ICM null A
Power dissipation Ptot 0.2 W
@ TLoc 25 °C
Location Ambient
Thermal resistance junction RTH 420 K/W
Location ambient
Thermal resistance junction (b) RTH null K/W
Location null
DC current gain hfe 120
@ VCE 5 V
@ IC 1 mA
DC current gain (b) hfe null
@ VCE null V
@ IC null mA
DC current gain (c) hfe null
@ VCE null V
@ IC null mA
Collector Base capacitance CCBO null pF
@ VCB null V
Collector saturation voltage VCEsat 300 mV
@ IC 10 mA
@ IB 0.5 mA
Input voltage on VIon null V
@ VCE null V
@ IC null mA
Input voltage off VIoff null V
@ VCE null V
@ IC null mA
Base Emitter voltage VBE null V
Collector Base cutoff current ICBO 100 nA
Emitter Base cutoff current IEBO 100 nA
Gain bandwidth product ft 200 MHz
@ IC 5 mA
@ VCE 10 V
@ f 100 MHz
Marking Marking XD
Net weight mnet 0.01 g
Case flammability UL94-V0 Yes
UL recognized UL-Recognition null
Storage temperature Tsmin
Tsmax

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