MMBT5451SDW-Q
Bipolar Transistors

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Product information

Product family Bipolar Transistors
Control and signal processing
Article description MMBT5451SDW-Q
BJT, SOT-363, 160V, 200mA, NPN+PNP, 0.2W, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMBT5451SDW-Q
MMBT5451SDW-Q Dual
Type SMD
Package SOT-363
Qualification AEC-Q compliant
Config Dual
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
Collector Emitter voltage VCEO null V
DC Collector current IC 500 mA
Polarity pol
Power dissipation Ptot 0.25 W
@ TLoc null °C
Location null
DC current gain hfe null
@ VCE null V
@ IC null mA
DC current gain (b) hfe null
@ VCE null V
@ IC null mA
DC current gain (c) hfe null
@ VCE null V
@ IC null mA
Junction temperature Tjmin null °C
Tjmax null °C
Peak Collector Current ICM null A
Peak Base current IBM null mA
Collector Base voltage VCBO null V
Emitter Base voltage VEBO null V
Collector saturation voltage VCEsat null mV
@ IC null mA
@ IB null mA
Base saturation voltage VBEsat null V
@ IC null mA
@ IB null mA
Base Emitter voltage VBE null V
Collector Base cutoff current ICBO null nA
Emitter Base cutoff current IEBO null nA
Gain bandwidth product ft null MHz
@ IC null mA
@ VCE null V
@ f null MHz
Marking Marking null
Thermal resistance junction RTH null K/W
Location null
Thermal resistance junction (b) RTH null K/W
Location null
Net weight mnet null g
Case flammability UL94-V0 No
UL recognized UL-Recognition null
Collector Base capacitance CCBO null pF
@ VCB null V
Storage temperature Tsmin -55 °C
Tsmax 150 °C

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