DIW170SIC750
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIW170SIC750 1700 V SiC MOSFET
SiC MOSFET, TO-247-3L, N, 7.5A, 1700V, 850mΩ, 175°C
Minimum order quantity 450
Stock 418
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIW170SIC750
DIW170SIC750 Single
Type Wire-lead
Package TO-247-3L
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
Drain source voltage VDS 1700 V
Drain current 25°C ID 7.5 A
On-resistance 1 RDSon1 0.85 Ω
@ ID 2 A
@ VGS 20 V
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Polarity pol N
ESD protection ESD protected No
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Drain current 100°C ID 5.3 A
Peak drain current IDM 19 A
@ tp null µs
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 84 W
@ TLoc 25 °C
Location Junction
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 7 ns
Rise time tr 10 ns
Turn-off delay time tD(off) 16 ns
Fall time tf 23 ns
Total switching energy Etotal 0.05 mJ
Total gate charge (4.5V) Qg (4.5V) null nC
Total gate charge (10V) Qg (10V) 23.8 nC
Gate-drain charge Qgd 7 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 285 pF
Output capacitance Coss 14 pF
Reverse transfer capacitance Crss 3 pF
Reverse recovery charge Qrr 86 nC
Avalanche Yes
Net weight mnet 6 g
Marking Marking Type
Case flammability UL94-V0 Yes
Thermal resistance junction RTH 1.78 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 40 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s

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