DIW170SIC070
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIW170SIC070 1700 V SiC MOSFET
SiC MOSFET, TO-247-3L, N, 70A, 1700V, 60mΩ, 175°C
Minimum order quantity 450
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIW170SIC070
DIW170SIC070 Single
Type Wire-lead
Package TO-247-3L
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
Drain source voltage VDS 1700 V
Drain current 25°C ID 70 A
On-resistance 1 RDSon1 0.06 Ω
@ ID 40 A
@ VGS 20 V
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Polarity pol N
ESD protection ESD protected No
Gate source voltage DC VGSS 18 V
Gate source voltage ESD VGSS null V
Drain current 100°C ID 45 A
Peak drain current IDM 140 A
@ tp null µs
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 455 W
@ TLoc 25 °C
Location null
Threshold voltage VGSth min 2.2 V
VGSth max 4.2 V
Turn-on delay time tD(on) 37 ns
Rise time tr 19 ns
Turn-off delay time tD(off) 30 ns
Fall time tf 14 ns
Total switching energy Etotal 1.95 mJ
Total gate charge (4.5V) Qg (4.5V) null nC
Total gate charge (10V) Qg (10V) 131 nC
Gate-drain charge Qgd 15 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 2951 pF
Output capacitance Coss 80 pF
Reverse transfer capacitance Crss 6 pF
Reverse recovery charge Qrr 201 nC
Avalanche Yes
Net weight mnet 6 g
Marking Marking Type
Case flammability UL94-V0 Yes
Thermal resistance junction RTH 0.33 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 40 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s

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