DIW120SIC023-AQ
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIW120SIC023-AQ 1200V SiC MOSFET
SiC MOSFET, TO-247-3L, N, 130A, 1200V, 23mΩ, 175°C, AEC-Q101
Minimum order quantity 720
Stock 120
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIW120SIC023-AQ
DIW120SIC023-AQ Single
Type Wire-lead
Package TO-247-3L
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
Drain source voltage VDS 1200 V
Drain current 25°C ID 130 A
On-resistance 1 RDSon1 0.023 Ω
@ ID 75 A
@ VGS 18 V
On-resistance 2 RDSon2 0.029 Ω
@ ID 75 A
@ VGS 18 V
Polarity pol N
ESD protection ESD protected No
Gate source voltage DC VGSS 18 V
Gate source voltage ESD VGSS null V
Drain current 100°C ID 100 A
Peak drain current IDM 260 A
@ tp null µs
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 600 W
@ TLoc 25 °C
Location Contact
Threshold voltage VGSth min 2.9 V
VGSth max 2.9 V
Turn-on delay time tD(on) 104 ns
Rise time tr 100 ns
Turn-off delay time tD(off) 158 ns
Fall time tf 50 ns
Total switching energy Etotal 8.39 mJ
Total gate charge (4.5V) Qg (4.5V) null nC
Total gate charge (10V) Qg (10V) 45 nC
Gate-drain charge Qgd 21 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 6150 pF
Output capacitance Coss 260 pF
Reverse transfer capacitance Crss 19 pF
Reverse recovery charge Qrr 760 nC
Avalanche Yes
Net weight mnet 6 g
Marking Marking Type
Case flammability UL94-V0 Yes
Thermal resistance junction RTH 0.21 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 40 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s

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