DIF170SIC049
SiC MOSFETs

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Product information

Product family SiC MOSFETs
High Speed High Voltage (Power) Switch
Article description DIF170SIC049 1700V SiC MOSFET
SiC MOSFET, TO-247-4L, N, 67A, 1700V, 49mΩ, 175°C
Minimum order quantity 450
Stock 420
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIF170SIC049
DIF170SIC049 Single
Type Wire-lead
Package TO-247-4L
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
Drain source voltage VDS 1700 V
Drain current 25°C ID 67 A
On-resistance 1 RDSon1 0.049 Ω
@ ID 40 A
@ VGS 18 V
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Polarity pol N
ESD protection ESD protected No
Gate source voltage DC VGSS 18 V
Gate source voltage ESD VGSS null V
Drain current 100°C ID 47 A
Peak drain current IDM 150 A
@ tp null µs
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 357 W
@ TLoc 25 °C
Location Junction
Threshold voltage VGSth min 1.9 V
VGSth max 4 V
Turn-on delay time tD(on) 43 ns
Rise time tr 21 ns
Turn-off delay time tD(off) 48 ns
Fall time tf 19 ns
Total switching energy Etotal 1.8 mJ
Total gate charge (4.5V) Qg (4.5V) null nC
Total gate charge (10V) Qg (10V) 179 nC
Gate-drain charge Qgd 32 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 3046 pF
Output capacitance Coss 107 pF
Reverse transfer capacitance Crss 12 pF
Reverse recovery charge Qrr 230 nC
Avalanche No
Net weight mnet 6 g
Marking Marking Type
Case flammability UL94-V0 Yes
Thermal resistance junction RTH 0.45 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 40 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s

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