DI4041P-AQ
Bipolar Transistors

Product information

Product family Bipolar Transistors
Control and signal processing
Article description DI4041P-AQ
BJT, SOT-89, -60 V, -6 A, PNP, 0.6W, 150°C, AEC-Q101
Minimum order quantity 1.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Distributor Availability

Technical data

Article number DI4041P-AQ
DI4041P-AQ Single
Type SMD
Package SOT-89
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
Collector Emitter voltage VCEO -60 V
DC Collector current IC -6000 mA
Polarity pol PNP
Power dissipation Ptot 0.600 W
@ TLoc 25 °C
Location ambient
DC current gain hfe 200
@ VCE -2 V
@ IC -500 mA
DC current gain (b) hfe 180
@ VCE -2 V
@ IC -1000 mA
DC current gain (c) hfe 150
@ VCE -2 V
@ IC -2000 mA
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Peak Collector Current ICM 15 A
Peak Base current IBM null mA
Collector Base voltage VCBO -60 V
Emitter Base voltage VEBO -5 V
Collector saturation voltage VCEsat -100.0 mV
@ IC -1000 mA
@ IB -50.0 mA
Base saturation voltage VBEsat -1.0 V
@ IC -1000 mA
@ IB -100.0 mA
Base Emitter voltage VBE -5 V
Collector Base cutoff current ICBO -100.0 nA
Emitter Base cutoff current IEBO -100 nA
Gain bandwidth product ft 110.0 MHz
@ IC -100 mA
@ VCE -10 V
@ f 100 MHz
Marking Marking DI4041P-AQ
Thermal resistance junction RTH 208.0 K/W
Location ambient
Thermal resistance junction (b) RTH null K/W
Location null
Net weight mnet
Case flammability UL94-V0 Yes
UL recognized UL-Recognition null
Collector Base capacitance CCBO null pF
@ VCB null V
Storage temperature Tsmin -55 °C
Tsmax 150 °C

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