DI255N04PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI255N04PQ
MOSFET, PowerQFN 5x6, N, 40V, 255A, 1.1mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH not declarable
Lead free No
Halogen free Yes

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Technical data

Article number DI255N04PQ
DI255N04PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 40 V
Drain current 25°C ID 255 A
On-resistance 1 RDSon1 0 Ω
@ ID 20 A
@ VGS 1 V
Drain current 100°C ID 161 A
On-resistance 2 RDSon2 0.0011 Ω
@ ID 20 A
@ VGS 10 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 114 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 1020 A
@ tp 10000 µs
Threshold voltage VGSth min 2.5 V
VGSth max 3.5 V
Turn-on delay time tD(on) 0 ns
Rise time tr 0 ns
Turn-off delay time tD(off) 0 ns
Fall time tf 0 ns
Total gate charge (10V) Qg (10V) 88.7 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 20.8 nC
Single pulse avalanche energy Eas 672.8 mJ
Input capacitance Ciss 5280 pF
Output capacitance Coss 1453 pF
Reverse transfer capacitance Crss 82 pF
Reverse recovery charge Qrr 89 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 1.8 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 45 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 40 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 77 mA/V
Intrinsic gate resistance RGi 2.4 Ω

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