DI100N04D1-AQ
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
Related products
News and Updates
Application Reference Diagrams
Request sample

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI100N04D1-AQ
MOSFET, DPAK, N, 40V, 100A, 4mΩ, 175°C, AEC-Q101
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Downloads & Links

Distributor Availability

Technical data

Article number DI100N04D1-AQ
DI100N04D1-AQ Single
Type SMD
Package TO-252AA/D-PAK
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 40 V
Drain current 25°C ID 100 A
On-resistance 1 RDSon1 0.004 Ω
@ ID 30 A
@ VGS 10 V
Drain current 100°C ID 73 A
On-resistance 2 RDSon2 0.005 Ω
@ ID 20 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 83.3 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 450 A
@ tp null µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 40 ns
Rise time tr 63 ns
Turn-off delay time tD(off) 37 ns
Fall time tf 9 ns
Total gate charge (10V) Qg (10V) 143 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 28 nC
Single pulse avalanche energy Eas 164 mJ
Input capacitance Ciss 7000 pF
Output capacitance Coss 549 pF
Reverse transfer capacitance Crss 404 pF
Reverse recovery charge Qrr 13 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.32 g
Marking Marking Type
Thermal resistance junction RTH 1.8 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 35 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 40 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 60 mA/V
Intrinsic gate resistance RGi 0.5 Ω

News and Updates

  • Filter:

Request sample