DI018N65D1
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
News and Updates
Request sample

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI018N65D1
MOSFET, DPAK, N, 650V, 18A, 0.19Ω, 175°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Downloads & Links

Distributor Availability

Technical data

Article number DI018N65D1
DI018N65D1 Single
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 650 V
Drain current 25°C ID 18 A
On-resistance 1 RDSon1 0.19 Ω
@ ID 9 A
@ VGS 10 V
Drain current 100°C ID 12.5 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS nul V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 142 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 54 A
@ tp null µs
Threshold voltage VGSth min 3 V
VGSth max 5 V
Turn-on delay time tD(on) 42 ns
Rise time tr 18 ns
Turn-off delay time tD(off) 90 ns
Fall time tf 24 ns
Total gate charge (10V) Qg (10V) 23 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 7 nC
Single pulse avalanche energy Eas 64 mJ
Input capacitance Ciss 1200 pF
Output capacitance Coss 50 pF
Reverse transfer capacitance Crss 2 pF
Reverse recovery charge Qrr 1 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.32 g
Marking Marking Type
Thermal resistance junction RTH 1.05 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 50 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 10 µA
@ VDS 650 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 2 mA/V
Intrinsic gate resistance RGi 6.5 Ω

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample