DI016N06PQ2-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI016N06PQ2-AQ
MOSFET, PowerQFN 5x6-Dual, N+N, 60V, 16A, 33mΩ, 150°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI016N06PQ2-AQ
DI016N06PQ2-AQ Dual
Type SMD
Package PowerQFN 5x6-Dual
Qualification AEC-Q101
Config Dual
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+N
Drain source voltage VDS 60 V
Drain current 25°C ID 16 A
On-resistance 1 RDSon1 0.033 Ω
@ ID 15 A
@ VGS 10 V
Drain current 100°C ID 10 A
On-resistance 2 RDSon2 0.038 Ω
@ ID 10 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 16.7 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 50 A
@ tp 10000 µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 11 ns
Rise time tr 18 ns
Turn-off delay time tD(off) 10 ns
Fall time tf 2 ns
Total gate charge (10V) Qg (10V) 19 nC
Total gate charge (4.5V) Qg (4.5V) 8.7 nC
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas 8.8 mJ
Input capacitance Ciss 1260 pF
Output capacitance Coss 47 pF
Reverse transfer capacitance Crss 43 pF
Reverse recovery charge Qrr 8 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 7.4 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 61 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 16 V
Drain source leakage current IDSS 1 µA
@ VDS 48 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 15 mA/V
Intrinsic gate resistance RGi 0.8 Ω

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