DI010N03PW-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI010N03PW-AQ
MOSFET, PowerQFN 2x2, N, 30V, 10A, 12mΩ, 150°C, AEC-Q101
Minimum order quantity 4.000
Stock 24.000
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI010N03PW-AQ
DI010N03PW-AQ Single
Type SMD
Package PowerQFN 2x2
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 30 V
Drain current 25°C ID 10 A
On-resistance 1 RDSon1 0.012 Ω
@ ID 10 A
@ VGS 10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.016 Ω
@ ID 9 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 1.4 W
@ TLoc 25 °C
Location ambient
Avalanche Yes
Peak drain current IDM 50 A
@ tp 10000 µs
Threshold voltage VGSth min 1 V
VGSth max 2 V
Turn-on delay time tD(on) 16 ns
Rise time tr 72 ns
Turn-off delay time tD(off) 16 ns
Fall time tf 22 ns
Total gate charge (10V) Qg (10V) 25 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 6 nC
Single pulse avalanche energy Eas 20 mJ
Input capacitance Ciss 1120 pF
Output capacitance Coss 150 pF
Reverse transfer capacitance Crss 105 pF
Reverse recovery charge Qrr 4 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.05 g
Marking Marking MY
Thermal resistance junction RTH 89 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 20 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs tbd mA/V
Intrinsic gate resistance RGi 1.8 Ω

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