DI008N09SQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI008N09SQ
MOSFET, SO-8, N, 90V, 8A, 75mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI008N09SQ
DI008N09SQ Single
Type SMD
Package SO-8
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 90 V
Drain current 25°C ID 8 A
On-resistance 1 RDSon1 0.075 Ω
@ ID 5 A
@ VGS 10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.09 Ω
@ ID 3 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 2 W
@ TLoc 25 °C
Location ambient
Avalanche Yes
Peak drain current IDM 23 A
@ tp 10000 µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 4 ns
Rise time tr 26 ns
Turn-off delay time tD(off) 16 ns
Fall time tf 9 ns
Total gate charge (10V) Qg (10V) 12 nC
Total gate charge (4.5V) Qg (4.5V) 12 nC
Gate-drain charge Qgd 2 nC
Single pulse avalanche energy Eas 3.2 mJ
Input capacitance Ciss 1100 pF
Output capacitance Coss 55 pF
Reverse transfer capacitance Crss 40 pF
Reverse recovery charge Qrr 0 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking DI08N09
Thermal resistance junction RTH 62.5 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 10 µA
@ VDS 90 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 15 mA/V
Intrinsic gate resistance RGi 3 Ω

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