DI003N03SQ2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI003N03SQ2
MOSFET, SO-8, N+N, 30V, 3A, 50mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI003N03SQ2
DI003N03SQ2 Dual
Type SMD
Package SO-8
Qualification Industrial Grade
Config Dual
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+N
Drain source voltage VDS 30 V
Drain current 25°C ID 3 A
On-resistance 1 RDSon1 0.05 Ω
@ ID 1 A
@ VGS 10 V
Drain current 100°C ID 1.9 A
On-resistance 2 RDSon2 0.07 Ω
@ ID 1 A
@ VGS 5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 1.6 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM 9 A
@ tp 300 µs
Threshold voltage VGSth min 1 V
VGSth max 2.5 V
Turn-on delay time tD(on) 19 ns
Rise time tr 20 ns
Turn-off delay time tD(off) 12 ns
Fall time tf 8 ns
Total gate charge (10V) Qg (10V) 4.5 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 1 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 121 pF
Output capacitance Coss 45 pF
Reverse transfer capacitance Crss 11 pF
Reverse recovery charge Qrr 8 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking DI03N03
Thermal resistance junction RTH 62.5 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 18 V
Drain source leakage current IDSS 1 µA
@ VDS 30 V
Gate source voltage DC VGSS 18 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 2.5 mA/V
Intrinsic gate resistance RGi null Ω

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