BC859B
Bipolar Transistors

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Product information

Product family Bipolar Transistors
Control and signal processing
Article description BC859B
BJT, SOT-23, 30V, 100mA, PNP, 0.25W, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number BC859B
BC859B Single
Type SMD
Package SOT-23
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 1
 
Collector Emitter voltage VCEO 30 V
DC Collector current IC 100 mA
Polarity pol PNP
Power dissipation Ptot 0.25 W
@ TLoc 25 °C
Location ambient
DC current gain hfe 290
@ VCE 5 V
@ IC 2 mA
DC current gain (b) hfe null
@ VCE null V
@ IC null mA
DC current gain (c) hfe null
@ VCE null V
@ IC null mA
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Peak Collector Current ICM 0.2 A
Peak Base current IBM 20 mA
Collector Base voltage VCBO 30 V
Emitter Base voltage VEBO 5 V
Collector saturation voltage VCEsat 650 mV
@ IC 100 mA
@ IB 5 mA
Base saturation voltage VBEsat 0.7 V
@ IC 10 mA
@ IB 0.5 mA
Base Emitter voltage VBE 0.75 V
Collector Base cutoff current ICBO 15 nA
Emitter Base cutoff current IEBO 100 nA
Gain bandwidth product ft 100 MHz
@ IC 10 mA
@ VCE 5 V
@ f 100 MHz
Marking Marking null
Thermal resistance junction RTH 417 K/W
Location ambient
Thermal resistance junction (b) RTH null K/W
Location null
Net weight mnet 0.01 g
Case flammability UL94-V0 Yes
UL recognized UL-Recognition null
Collector Base capacitance CCBO 4.5 pF
@ VCB 10 V
Storage temperature Tsmin -55 °C
Tsmax 150 °C

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