BC847BP
Bipolar Transistors

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Product information

Product family Bipolar Transistors
Control and signal processing
Article description BC847BP DFN1006-3
BJT, DFN1006-3, 45V, 100mA, NPN, 0.15W, 150°C
Minimum order quantity 10.000
Stock 120.000
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number BC847BP
BC847BP Single
Type SMD
Package DFN1006-3
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 1
 
Collector Emitter voltage VCEO 45 V
DC Collector current IC 100 mA
Polarity pol NPN
Power dissipation Ptot 0.15 W
@ TLoc 25 °C
Location ambient
DC current gain hfe 325
@ VCE 5 V
@ IC 2 mA
DC current gain (b) hfe null
@ VCE null V
@ IC null mA
DC current gain (c) hfe null
@ VCE null V
@ IC null mA
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Peak Collector Current ICM 200 A
Peak Base current IBM null mA
Collector Base voltage VCBO 50 V
Emitter Base voltage VEBO 6 V
Collector saturation voltage VCEsat 600 mV
@ IC 100 mA
@ IB 5 mA
Base saturation voltage VBEsat null V
@ IC null mA
@ IB null mA
Base Emitter voltage VBE 0.7 V
Collector Base cutoff current ICBO 15 nA
Emitter Base cutoff current IEBO null nA
Gain bandwidth product ft 300 MHz
@ IC 10 mA
@ VCE 5 V
@ f 1 MHz
Marking Marking 1F
Thermal resistance junction RTH 600 K/W
Location ambient
Thermal resistance junction (b) RTH null K/W
Location null
Net weight mnet 0.0001 g
Case flammability UL94-V0 Yes
UL recognized UL-Recognition null
Collector Base capacitance CCBO 6 pF
@ VCB 10 V
Storage temperature Tsmin -55 °C
Tsmax 150 °C

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