2N5401
Bipolar Transistors

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Product information

Product family Bipolar Transistors
Control and signal processing
Article description 2N5401
BJT, TO-92, 150V, 600mA, PNP, 0.625W, 150°C
Minimum order quantity 4.000
Stock 12.000
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number 2N5401
2N5401 Single
Type Wire-lead
Package TO-92
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
Collector Emitter voltage VCEO -150 V
DC Collector current IC -2500 mA
Polarity pol PNP
Power dissipation Ptot 0.625 W
@ TLoc 25 °C
Location ambient
DC current gain hfe 60
@ VCE -5 V
@ IC -10 mA
DC current gain (b) hfe 50
@ VCE 5 V
@ IC 50 mA
DC current gain (c) hfe 50
@ VCE 5 V
@ IC 1 mA
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Peak Collector Current ICM 1 A
Peak Base current IBM 100 mA
Collector Base voltage VCBO 160 V
Emitter Base voltage VEBO 5 V
Collector saturation voltage VCEsat -500 mV
@ IC -50 mA
@ IB -5 mA
Base saturation voltage VBEsat 0.95 V
@ IC 150 mA
@ IB 12 mA
Base Emitter voltage VBE null V
Collector Base cutoff current ICBO null nA
Emitter Base cutoff current IEBO 100 nA
Gain bandwidth product ft 100 MHz
@ IC -10 mA
@ VCE -5 V
@ f 50 MHz
Marking Marking Type
Thermal resistance junction RTH 200 K/W
Location ambient
Thermal resistance junction (b) RTH null K/W
Location null
Net weight mnet 0.18 g
Case flammability UL94-V0 Yes
UL recognized UL-Recognition null
Collector Base capacitance CCBO 6 pF
@ VCB 10 V
Storage temperature Tsmin -55 °C
Tsmax 150 °C

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