2N2222A
Bipolar Transistors

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Product information

Product family Bipolar Transistors
Control and signal processing
Article description 2N2222A
BJT, TO-92, 40V, 600mA, NPN, 0.625W, 150°C
Minimum order quantity 4.000
Stock 300.000
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number 2N2222A
2N2222A Single
Type Wire-lead
Package TO-92
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
Collector Emitter voltage VCEO 40 V
DC Collector current IC 200 mA
Polarity pol NPN
Power dissipation Ptot 0.625 W
@ TLoc 25 °C
Location ambient
DC current gain hfe 100
@ VCE 10 V
@ IC 150 mA
DC current gain (b) hfe 75
@ VCE 10 V
@ IC 10 mA
DC current gain (c) hfe 50
@ VCE 10 V
@ IC 1 mA
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Peak Collector Current ICM 0.8 A
Peak Base current IBM null mA
Collector Base voltage VCBO 75 V
Emitter Base voltage VEBO 6 V
Collector saturation voltage VCEsat 300 mV
@ IC 150 mA
@ IB 15 mA
Base saturation voltage VBEsat 1.3 V
@ IC 500 mA
@ IB 50 mA
Base Emitter voltage VBE 1.2 V
Collector Base cutoff current ICBO 10 nA
Emitter Base cutoff current IEBO null nA
Gain bandwidth product ft 250 MHz
@ IC 20 mA
@ VCE 20 V
@ f 100 MHz
Marking Marking Type
Thermal resistance junction RTH 200 K/W
Location a
Thermal resistance junction (b) RTH null K/W
Location null
Net weight mnet 0.18 g
Case flammability UL94-V0 Yes
UL recognized UL-Recognition null
Collector Base capacitance CCBO 8 pF
@ VCB 10 V
Storage temperature Tsmin -65 °C
Tsmax 150 °C

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