SIW10C120
SiC Schottky Diodes
Product information
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Product family
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SiC Schottky Diodes High Speed High Voltage Rectification |
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Article description
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SIW10C120
SiC Schottky 10A 1200V
SiC Schottky, TO-247-2L, 1200V, 10A, 175°C |
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Minimum order quantity
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450
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Stock
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0
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Customs Tariff Number
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85411000
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RoHS
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compliant with exemption
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REACH
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declarable
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Lead free
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No |
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Halogen free
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No |
Downloads & Links
Technical data
| Article number |
SIW10C120 |
|
| Type |
Wire-lead |
| Package |
TO-247-2L |
| Qualification |
Industrial Grade |
| Config |
Single K |
| Life Cycle |
engineering sample |
| ESD sensitive |
No |
| MSL |
n/a |
| |
|
Repetitive peak reverse voltage |
VRRM |
1200 V |
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Maximum average forward rectified current |
IFAV |
10 A |
|
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@ TLoc |
150 °C |
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Location |
Contact |
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Junction temperature |
Tjmin |
-50 °C |
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Tjmax |
175 °C |
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Forward voltage 25°C |
VF |
1.6 V |
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@ IF |
10 A |
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Peak forward surge current 50Hz |
IFSM |
70 A |
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Leakage current 25°C |
IR |
60 µA |
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@ VR |
1200 V |
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Capacitive charge |
Qc |
57 nC |
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@ VR |
1200 V |
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Net weight |
mnet |
1.8 g |
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Case flammability |
UL94-V0 |
Yes |
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UL recognized |
UL-Recognition |
null |
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Thermal resistance junction (b) |
RTH |
1.6 K/W |
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Location |
case |
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Storage temperature |
Tsmin |
-50 °C |
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Tsmax |
175 °C |
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Solder & Assembly |
Solder & Assembly |
260°/10s |
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Marking |
Marking |
Type |
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Thermal resistance junction |
RTH |
null K/W |
|
|
Location |
null |
Application Reference Diagrams
无记录
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