SI10C065D2-AQ
SiC Schottky Diodes
Product information
| Product family | SiC Schottky Diodes High Speed High Voltage Rectification |
|---|---|
| Article description |
SI10C065D2-AQ
SiC Schottky Diode 10A 650V
SiC Schottky, D2PAK, 650V, 10A, 175°C, AEC-Q101 |
| Minimum order quantity | 1.000 |
| Stock | 0 |
| Customs Tariff Number | 85411000 |
| RoHS | compliant with exemption 7(a)-I |
| REACH | declarable |
| Lead free | No |
| Halogen free | No |
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Technical data
| Article number | SI10C065D2-AQ | |
|---|---|---|
|
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| Type | SMD | |
| Package | TO-263AB/D2PAK | |
| Qualification | AEC-Q101 | |
| Config | Single | |
| Life Cycle | engineering sample | |
| ESD sensitive | No | |
| MSL | n/a | |
| Repetitive peak reverse voltage | VRRM | 650 V |
| Maximum average forward rectified current | IFAV | 10 A |
| @ TLoc | 150 °C | |
| Location | Terminal | |
| Junction temperature | Tjmin | -50 °C |
| Tjmax | 175 °C | |
| Forward voltage 25°C | VF | 1.55 V |
| @ IF | 10 A | |
| Peak forward surge current 50Hz | IFSM | 38 A |
| Leakage current 25°C | IR | 200 µA |
| @ VR | 650 V | |
| Capacitive charge | Qc | 0 nC |
| @ VR | 400 V | |
| Net weight | mnet | 1.6 g |
| Case flammability | UL94-V0 | Yes |
| UL recognized | UL-Recognition | null |
| Thermal resistance junction (b) | RTH | 1.9 K/W |
| Location | case | |
| Storage temperature | Tsmin | -50 °C |
| Tsmax | 175 °C | |
| Solder & Assembly | Solder & Assembly | 260°/10s |
| Marking | Marking | Type |
| Thermal resistance junction | RTH | null K/W |
| Location | null | |
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