MMBTRC105SS-Q
Digital Transistors

Product information

Product family Digital Transistors
Digital controls, signal processing
Article description MMBTRC105SS-Q
Biased BJT, SOT-23, NPN, 2.2kΩ, 47kΩ, 50V, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Technical data

Article number MMBTRC105SS-Q
MMBTRC105SS-Q Single 2R
Type SMD
Package SOT-23
Qualification AEC-Q compliant
Config Single 2R
Life Cycle active
ESD sensitive No
MSL 1
 
Polarity pol NPN
Resistor R1 2200
R2 47000
Collector Emitter voltage VCEO 50 V
Collector Base voltage VCBO null V
Emitter Base voltage VEBO null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
DC Collector current IC 100 mA
Peak Collector Current ICM null A
Power dissipation Ptot 0.2 W
@ TLoc 25 °C
Location Ambient
Thermal resistance junction RTH null K/W
Location null
Thermal resistance junction (b) RTH null K/W
Location null
DC current gain hfe 30
@ VCE 5 V
@ IC 10 mA
DC current gain (b) hfe null
@ VCE null V
@ IC null mA
DC current gain (c) hfe null
@ VCE null V
@ IC null mA
Collector Base capacitance CCBO null pF
@ VCB null V
Collector saturation voltage VCEsat 300 mV
@ IC 100 mA
@ IB 4 mA
Input voltage on VIon 1.1 V
@ VCE 0.2 V
@ IC 5 mA
Input voltage off VIoff 0.5 V
@ VCE 5 V
@ IC 0.1 mA
Base Emitter voltage VBE null V
Collector Base cutoff current ICBO null nA
Emitter Base cutoff current IEBO null nA
Gain bandwidth product ft 200 MHz
@ IC 5 mA
@ VCE 10 V
@ f 200 MHz
Marking Marking HY
Net weight mnet 0.01 g
Case flammability UL94-V0 Yes
UL recognized UL-Recognition null
Storage temperature Tsmin
Tsmax

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