MMBTA56
Bipolar Transistors

Product information

Product family	Bipolar Transistors Control and signal processing
Article description	MMBTA56 BJT, SOT-23, -80V, -500mA, PNP, 0.35W, 150°C
Minimum order quantity	3.000
Stock	0
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MMBTA56

Type	SMD
Package	SOT-23
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	1

Collector Emitter voltage	VCEO	-80 V
DC Collector current	IC	500 mA
Polarity	pol	PNP

Power dissipation	Ptot	0.35 W
	@ TLoc	25 °C
	Location	ambient
DC current gain	hfe	100
	@ VCE	-1 V
	@ IC	-100 mA
DC current gain (b)	hfe	null
	@ VCE	null V
	@ IC	null mA
DC current gain (c)	hfe	null
	@ VCE	null V
	@ IC	null mA
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Peak Collector Current	ICM	null A
Peak Base current	IBM	200 mA
Collector Base voltage	VCBO	80 V
Emitter Base voltage	VEBO	4 V
Collector saturation voltage	VCEsat	250 mV
	@ IC	-100 mA
	@ IB	-10 mA
Base saturation voltage	VBEsat	null V
	@ IC	null mA
	@ IB	null mA
Base Emitter voltage	VBE	1.2 V
Collector Base cutoff current	ICBO	100 nA
Emitter Base cutoff current	IEBO	100 nA
Gain bandwidth product	ft	50 MHz
	@ IC	-100 mA
	@ VCE	-1 V
	@ f	100 MHz
Marking	Marking	JB
Thermal resistance junction	RTH	357 K/W
	Location	ambient
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Net weight	mnet	0.01 g
Case flammability	UL94-V0	Yes
UL recognized	UL-Recognition	null
Collector Base capacitance	CCBO	null pF
	@ VCB	null V
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C