DIW065SIC080
SiC MOSFETs

Product information

Product family	SiC MOSFETs High Speed High Voltage (Power) Switch
Article description	DIW065SIC080 650V SiC MOSFET SiC MOSFET, TO-247-3L, N, 36A, 650V, 80mΩ, 175°C
Minimum order quantity	450
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption
REACH	declarable
Lead free	No
Halogen free	No

Article number	DIW065SIC080

Type	Wire-lead
Package	TO-247-3L
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	n/a

Drain source voltage	VDS	650 V
Drain current 25°C	ID	36 A
On-resistance 1	RDSon1	0.08 Ω

	@ ID	15 A
	@ VGS	18 V
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	null V
Polarity	pol	N
ESD protection	ESD protected	No
Gate source voltage DC	VGSS	18 V
Gate source voltage ESD	VGSS	null V
Drain current 100°C	ID	26 A
Peak drain current	IDM	100 A
	@ tp	null µs
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	175 W
	@ TLoc	25 °C
	Location	Junction
Threshold voltage	VGSth min	2 V
	VGSth max	4 V
Turn-on delay time	tD(on)	10 ns
Rise time	tr	13 ns
Turn-off delay time	tD(off)	20 ns
Fall time	tf	9 ns
Total switching energy	Etotal	0.148 mJ
Total gate charge (4.5V)	Qg (4.5V)	null nC
Total gate charge (10V)	Qg (10V)	75 nC
Gate-drain charge	Qgd	26 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	1480 pF
Output capacitance	Coss	110 pF
Reverse transfer capacitance	Crss	4.8 pF
Reverse recovery charge	Qrr	80 nC
Avalanche	Yes
Net weight	mnet	6 g
Marking	Marking	Type
Case flammability	UL94-V0	Yes
Thermal resistance junction	RTH	0.21 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	40 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s