DIF120SIC028-AQ
SiC MOSFETs

Product information

Product family	SiC MOSFETs High Speed High Voltage (Power) Switch
Article description	DIF120SIC028-AQ 1200V SiC MOSFET SiC MOSFET, TO-247-4L, N, 100A, 1200V, 28mΩ, 175°C, AEC-Q101
Minimum order quantity	450
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DIF120SIC028-AQ

Type	Wire-lead
Package	TO-247-4L
Qualification	AEC-Q101
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	n/a

Drain source voltage	VDS	1200 V
Drain current 25°C	ID	100 A
On-resistance 1	RDSon1	0.028 Ω

	@ ID	60 A
	@ VGS	18 V
On-resistance 2	RDSon2	30 Ω
	@ ID	60 A
	@ VGS	20 V
Polarity	pol	N
ESD protection	ESD protected	No
Gate source voltage DC	VGSS	18 V
Gate source voltage ESD	VGSS	null V
Drain current 100°C	ID	85 A
Peak drain current	IDM	300 A
	@ tp	null µs
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	517 W
	@ TLoc	25 °C
	Location	Contact
Threshold voltage	VGSth min	2 V
	VGSth max	4 V
Turn-on delay time	tD(on)	24 ns
Rise time	tr	19 ns
Turn-off delay time	tD(off)	43 ns
Fall time	tf	8 ns
Total switching energy	Etotal	1.07 mJ
Total gate charge (4.5V)	Qg (4.5V)	null nC
Total gate charge (10V)	Qg (10V)	217 nC
Gate-drain charge	Qgd	27 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	4500 pF
Output capacitance	Coss	180 pF
Reverse transfer capacitance	Crss	16 pF
Reverse recovery charge	Qrr	500 nC
Avalanche	No
Net weight	mnet	6 g
Marking	Marking	Type
Case flammability	UL94-V0	Yes
Thermal resistance junction	RTH	0.32 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	40 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s