DI2579N-Q
Bipolar Transistors

Product information

Product family	Bipolar Transistors Control and signal processing
Article description	DI2579N-Q BJT, SOT-223, 700V, 1000mA, NPN, 1.25W, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI2579N-Q

Type	SMD
Package	SOT-223
Qualification	AEC-Q compliant
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

Collector Emitter voltage	VCEO	700 V
DC Collector current	IC	1500 mA
Polarity	pol	NPN

Power dissipation	Ptot	1.25 W
	@ TLoc	25 °C
	Location	ambient
DC current gain	hfe	20
	@ VCE	5 V
	@ IC	350 mA
DC current gain (b)	hfe	null
	@ VCE	null V
	@ IC	null mA
DC current gain (c)	hfe	null
	@ VCE	null V
	@ IC	null mA
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Peak Collector Current	ICM	2 A
Peak Base current	IBM	1000 mA
Collector Base voltage	VCBO	null V
Emitter Base voltage	VEBO	9 V
Collector saturation voltage	VCEsat	1000 mV
	@ IC	350 mA
	@ IB	50 mA
Base saturation voltage	VBEsat	null V
	@ IC	null mA
	@ IB	null mA
Base Emitter voltage	VBE	null V
Collector Base cutoff current	ICBO	null nA
Emitter Base cutoff current	IEBO	null nA
Gain bandwidth product	ft	0 MHz
	@ IC	0 mA
	@ VCE	0 V
	@ f	0 MHz
Marking	Marking	Type
Thermal resistance junction	RTH	80 K/W
	Location	ambient
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Net weight	mnet	0.04 g
Case flammability	UL94-V0	Yes
UL recognized	UL-Recognition	null
Collector Base capacitance	CCBO	null pF
	@ VCB	null V
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C