DI170SIC850D7
SiC MOSFETs

Product information

Product family	SiC MOSFETs High Speed High Voltage (Power) Switch
Article description	DI170SIC850D7 1700V SiC MOSFET SiC MOSFET, TO-263-7L, N, 7A, 1700V, 850mΩ, 150°C
Minimum order quantity	800
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI170SIC850D7

Type	SMD
Package	TO-263-7L
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

Drain source voltage	VDS	1700 V
Drain current 25°C	ID	7 A
On-resistance 1	RDSon1	0.85 Ω

	@ ID	2 A
	@ VGS	20 V
On-resistance 2	RDSon2	950 Ω
	@ ID	2 A
	@ VGS	20 V
Polarity	pol	N
ESD protection	ESD protected	No
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Drain current 100°C	ID	4.5 A
Peak drain current	IDM	9 A
	@ tp	null µs
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	62 W
	@ TLoc	25 °C
	Location	Junction
Threshold voltage	VGSth min	2 V
	VGSth max	4 V
Turn-on delay time	tD(on)	14 ns
Rise time	tr	23 ns
Turn-off delay time	tD(off)	38 ns
Fall time	tf	14 ns
Total switching energy	Etotal	14.2 mJ
Total gate charge (4.5V)	Qg (4.5V)	null nC
Total gate charge (10V)	Qg (10V)	23 nC
Gate-drain charge	Qgd	7.6 nC
Single pulse avalanche energy	Eas	69 mJ
Input capacitance	Ciss	198 pF
Output capacitance	Coss	13 pF
Reverse transfer capacitance	Crss	2 pF
Reverse recovery charge	Qrr	15 nC
Avalanche	No
Net weight	mnet	0.32 g
Marking	Marking	Type
Case flammability	UL94-V0	Yes
Thermal resistance junction	RTH	1.8 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	40 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s