DI120SIC089D7-AQ
SiC MOSFETs

Product information

Product family	SiC MOSFETs High Speed High Voltage (Power) Switch
Article description	DI120SIC089D7-AQ 1200V SiC MOSFET SiC MOSFET, TO-263-7L, N, 46A, 1200V, 89mΩ, 175°C, AEC-Q101
Minimum order quantity	800
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI120SIC089D7-AQ

Type	SMD
Package	TO-263-7L
Qualification	AEC-Q101
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	1

Drain source voltage	VDS	1200 V
Drain current 25°C	ID	46 A
On-resistance 1	RDSon1	0.089 Ω

	@ ID	20 A
	@ VGS	18 V
On-resistance 2	RDSon2	0.09 Ω
	@ ID	20 A
	@ VGS	18 V
Polarity	pol	N
ESD protection	ESD protected	No
Gate source voltage DC	VGSS	18 V
Gate source voltage ESD	VGSS	null V
Drain current 100°C	ID	35 A
Peak drain current	IDM	105 A
	@ tp	null µs
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	263 W
	@ TLoc	25 °C
	Location	Junction
Threshold voltage	VGSth min	2 V
	VGSth max	4 V
Turn-on delay time	tD(on)	14 ns
Rise time	tr	10 ns
Turn-off delay time	tD(off)	22 ns
Fall time	tf	9 ns
Total switching energy	Etotal	0.15 mJ
Total gate charge (4.5V)	Qg (4.5V)	null nC
Total gate charge (10V)	Qg (10V)	103 nC
Gate-drain charge	Qgd	36 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	2451 pF
Output capacitance	Coss	79 pF
Reverse transfer capacitance	Crss	6 pF
Reverse recovery charge	Qrr	76 nC
Avalanche	No
Net weight	mnet	0.32 g
Marking	Marking	Type
Case flammability	UL94-V0	Yes
Thermal resistance junction	RTH	0.57 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	TBA K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s