DI120SIC055T7
SiC MOSFETs

Product information

Product family	SiC MOSFETs High Speed High Voltage (Power) Switch
Article description	DI120SIC055T7 1200V SiC MOSFET SiC MOSFET, T7-PAK, N, 55A, 1200V, 55mΩ, 175°C
Minimum order quantity	800
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI120SIC055T7

Type	Wire-lead
Package	T7-PAK
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

Drain source voltage	VDS	1200 V
Drain current 25°C	ID	55.000 A
On-resistance 1	RDSon1	0.05500 Ω

	@ ID	20.000 A
	@ VGS	18 V
On-resistance 2	RDSon2	0.05000 Ω
	@ ID	20.000 A
	@ VGS	15 V
Polarity	pol	N
ESD protection	ESD protected	No
Gate source voltage DC	VGSS
Gate source voltage ESD	VGSS
Drain current 100°C	ID	39.000 A
Peak drain current	IDM	120.000 A
	@ tp	10 µs
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	417.000 W
	@ TLoc	25 °C
	Location	Junction
Threshold voltage	VGSth min	2.0 V
	VGSth max	3.1 V
Turn-on delay time	tD(on)	18 ns
Rise time	tr	14 ns
Turn-off delay time	tD(off)	28 ns
Fall time	tf	8 ns
Total switching energy	Etotal	227.00 mJ
Total gate charge (4.5V)	Qg (4.5V)
Total gate charge (10V)	Qg (10V)	56.0 nC
Gate-drain charge	Qgd	33 nC
Single pulse avalanche energy	Eas
Input capacitance	Ciss	1412 pF
Output capacitance	Coss	102 pF
Reverse transfer capacitance	Crss	23 pF
Reverse recovery charge	Qrr	226.0 nC
Avalanche	No
Net weight	mnet
Marking	Marking
Case flammability	UL94-V0	No
Thermal resistance junction	RTH
	Location
UL recognized	UL-Recognition
Thermal resistance junction (b)	RTH
	Location
Storage temperature	Tsmin
	Tsmax
Solder & Assembly	Solder & Assembly