DI0619PW
Bipolar Transistors

Product information

Product family	Bipolar Transistors Control and signal processing
Article description	DI0619PW BJT, QFN2x2, 50V, 4000mA, NPN, 1.5W, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI0619PW

Type	SMD
Package	PowerQFN 2x2
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	1

Collector Emitter voltage	VCEO	50 V
DC Collector current	IC	4000 mA
Polarity	pol	NPN

Power dissipation	Ptot	12.000 W
	@ TLoc	25 °C
	Location	ambient
DC current gain	hfe	450
	@ VCE	2 V
	@ IC	200 mA
DC current gain (b)	hfe	400
	@ VCE	2 V
	@ IC	1000 mA
DC current gain (c)	hfe	225
	@ VCE	2 V
	@ IC	2000 mA
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Peak Collector Current	ICM	6 A
Peak Base current	IBM
Collector Base voltage	VCBO	100 V
Emitter Base voltage	VEBO	7 V
Collector saturation voltage	VCEsat	150.0 mV
	@ IC	2000 mA
	@ IB	50.0 mA
Base saturation voltage	VBEsat	1.0 V
	@ IC	4000 mA
	@ IB	200.0 mA
Base Emitter voltage	VBE	1 V
Collector Base cutoff current	ICBO	100.0 nA
Emitter Base cutoff current	IEBO	20 nA
Gain bandwidth product	ft	165.0 MHz
	@ IC	50 mA
	@ VCE	10 V
	@ f	1 MHz
Marking	Marking	Type
Thermal resistance junction	RTH	83.0 K/W
	Location	Ambient
Thermal resistance junction (b)	RTH	16.8 K/W
	Location	Terminal
Net weight	mnet	0.010 g
Case flammability	UL94-V0	Yes
UL recognized	UL-Recognition	null
Collector Base capacitance	CCBO	12 pF
	@ VCB	10 V
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C