DI005F060D1
IGBT (Insulated Gate Bipolar Transistors)

Product information

Product family IGBT (Insulated Gate Bipolar Transistors)
Power Switch for Inverters
Article description DI005F060D1
IGBT, DPAK, N-Fast, 600 V, 5 A
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Technical data

Article number DI005F060D1
DI005F060D1 Single
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL n/a
 
Collector Emitter Voltage S VCES 600 V
DC Collector Current 100°C IC100 5 A
Peak Collector Current ICM 0 A
Polarity pol N-Fast
Junction temperature Tjmin -40 °C
Tjmax 150 °C
Power dissipation Ptot 52 W
@ TLoc 25 °C
Location Contact
Gate Emitter Threshold Voltage VGEthmin 3.5 V
VGEth 0 V
VGEthmax 6.5 V
Collector Emitter Saturation Voltage VCEsat100 1.8 V
@ IC100 5 A
@ VGE 15 V
Rise time tr 14 ns
Fall time tf 145 ns
Net weight mnet 0.32 g
Marking Marking Type
Case flammability UL94-V0 Yes
Thermal resistance junction RTH 3.4 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 45 K/W
Location ambient
Storage temperature Tsmin -40 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s

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