DI005F060D1
IGBT (Insulated Gate Bipolar Transistors)
Product information
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Technical data
| Article number |
DI005F060D1 |
|
| Type |
SMD |
| Package |
TO-252AA/D-PAK |
| Qualification |
Industrial Grade |
| Config |
Single |
| Life Cycle |
engineering sample |
| ESD sensitive |
No |
| MSL |
n/a |
| |
|
Collector Emitter Voltage S |
VCES |
600 V |
|
DC Collector Current 100°C |
IC100 |
5 A |
|
Peak Collector Current |
ICM |
0 A |
|
|
Polarity |
pol |
N-Fast |
|
Junction temperature |
Tjmin |
-40 °C |
|
|
Tjmax |
150 °C |
|
Power dissipation |
Ptot |
52 W |
|
|
@ TLoc |
25 °C |
|
|
Location |
Contact |
|
Gate Emitter Threshold Voltage |
VGEthmin |
3.5 V |
|
|
VGEth |
0 V |
|
|
VGEthmax |
6.5 V |
|
Collector Emitter Saturation Voltage |
VCEsat100 |
1.8 V |
|
|
@ IC100 |
5 A |
|
|
@ VGE |
15 V |
|
Rise time |
tr |
14 ns |
|
Fall time |
tf |
145 ns |
|
Net weight |
mnet |
0.32 g |
|
Marking |
Marking |
Type |
|
Case flammability |
UL94-V0 |
Yes |
|
Thermal resistance junction |
RTH |
3.4 K/W |
|
|
Location |
case |
|
UL recognized |
UL-Recognition |
null |
|
Thermal resistance junction (b) |
RTH |
45 K/W |
|
|
Location |
ambient |
|
Storage temperature |
Tsmin |
-40 °C |
|
|
Tsmax |
150 °C |
|
Solder & Assembly |
Solder & Assembly |
260°/10s |
Application Reference Diagrams
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