BST62
Bipolar Transistors

Product information

Product family	Bipolar Transistors Control and signal processing
Article description	BST62 Darlington BJT, SOT-89, 110V, 1000mA, PNP, 1.3W, 150°C
Minimum order quantity	1.000
Stock	0
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	BST62

Type	SMD
Package	SOT-89
Qualification	Industrial Grade
Config	Darlington NPN
Life Cycle	active
ESD sensitive	No
MSL	3

Collector Emitter voltage	VCEO	110 V
DC Collector current	IC	1500 mA
Polarity	pol	PNP

Power dissipation	Ptot	1.3 W
	@ TLoc	25 °C
	Location	ambient
DC current gain	hfe	800
	@ VCE	10 V
	@ IC	150 mA
DC current gain (b)	hfe	null
	@ VCE	null V
	@ IC	null mA
DC current gain (c)	hfe	null
	@ VCE	null V
	@ IC	null mA
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Peak Collector Current	ICM	2 A
Peak Base current	IBM	null mA
Collector Base voltage	VCBO	110 V
Emitter Base voltage	VEBO	5 V
Collector saturation voltage	VCEsat	1200 mV
	@ IC	500 mA
	@ IB	0.5 mA
Base saturation voltage	VBEsat	null V
	@ IC	null mA
	@ IB	null mA
Base Emitter voltage	VBE	null V
Collector Base cutoff current	ICBO	null nA
Emitter Base cutoff current	IEBO	1000 nA
Gain bandwidth product	ft	185 MHz
	@ IC	500 mA
	@ VCE	5 V
	@ f	100 MHz
Marking	Marking	Type
Thermal resistance junction	RTH	96 K/W
	Location	ambient
Thermal resistance junction (b)	RTH	16 K/W
	Location	terminal
Net weight	mnet	0.01 g
Case flammability	UL94-V0	Yes
UL recognized	UL-Recognition	null
Collector Base capacitance	CCBO	null pF
	@ VCB	null V
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C