BCR08PN
Digital Transistors

Product information

Product family	Digital Transistors Digital controls, signal processing
Article description	BCR08PN Biased BJT, SOT-363, NPN+PNP, 2.2kΩ, 47kΩ, 50V, 150°C
Minimum order quantity	3.000
Stock	9.000
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	BCR08PN

Type	SMD
Package	SOT-363
Qualification	Industrial Grade
Config	Dual 2R
Life Cycle	active
ESD sensitive	No
MSL	1

Polarity	pol	NPN+PNP
Resistor	R1	2200 Ω
	R2	47000 Ω

Collector Emitter voltage	VCEO	50 V
Collector Base voltage	VCBO	50 V
Emitter Base voltage	VEBO	6 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
DC Collector current	IC	100 mA
Peak Collector Current	ICM	null A
Power dissipation	Ptot	0.25 W
	@ TLoc	25 °C
	Location	Ambient
Thermal resistance junction	RTH	420 K/W
	Location	ambient
Thermal resistance junction (b)	RTH	null K/W
	Location	null
DC current gain	hfe	70
	@ VCE	5 V
	@ IC	5 mA
DC current gain (b)	hfe	null
	@ VCE	null V
	@ IC	null mA
DC current gain (c)	hfe	null
	@ VCE	null V
	@ IC	null mA
Collector Base capacitance	CCBO	2 pF
	@ VCB	10 V
Collector saturation voltage	VCEsat	300 mV
	@ IC	10 mA
	@ IB	0.5 mA
Input voltage on	VIon	1.1 V
	@ VCE	0.3 V
	@ IC	2 mA
Input voltage off	VIoff	0.8 V
	@ VCE	5 V
	@ IC	0.1 mA
Base Emitter voltage	VBE	null V
Collector Base cutoff current	ICBO	100 nA
Emitter Base cutoff current	IEBO	164 nA
Gain bandwidth product	ft	170 MHz
	@ IC	10 mA
	@ VCE	5 V
	@ f	100 MHz
Marking	Marking	D3
Net weight	mnet	0.01 g
Case flammability	UL94-V0	Yes
UL recognized	UL-Recognition	null
Storage temperature	Tsmin
	Tsmax