BC858AW
Bipolar Transistors

Product information

Product family	Bipolar Transistors Control and signal processing
Article description	BC858AW BJT, SOT-323, 30V, 100mA, PNP, 0.2W, 150°C
Minimum order quantity	3.000
Stock	0
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	BC858AW

Type	SMD
Package	SOT-323
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	1

Collector Emitter voltage	VCEO	30 V
DC Collector current	IC	100 mA
Polarity	pol	PNP

Power dissipation	Ptot	0.2 W
	@ TLoc	25 °C
	Location	ambient
DC current gain	hfe	180
	@ VCE	5 V
	@ IC	2 mA
DC current gain (b)	hfe	null
	@ VCE	null V
	@ IC	null mA
DC current gain (c)	hfe	null
	@ VCE	null V
	@ IC	null mA
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Peak Collector Current	ICM	0.2 A
Peak Base current	IBM	200 mA
Collector Base voltage	VCBO	30 V
Emitter Base voltage	VEBO	5 V
Collector saturation voltage	VCEsat	650 mV
	@ IC	100 mA
	@ IB	5 mA
Base saturation voltage	VBEsat	0.7 V
	@ IC	10 mA
	@ IB	0.5 mA
Base Emitter voltage	VBE	0.75 V
Collector Base cutoff current	ICBO	15 nA
Emitter Base cutoff current	IEBO	100 nA
Gain bandwidth product	ft	100 MHz
	@ IC	10 mA
	@ VCE	5 V
	@ f	100 MHz
Marking	Marking	null
Thermal resistance junction	RTH	620 K/W
	Location	ambient
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Net weight	mnet	0.01 g
Case flammability	UL94-V0	Yes
UL recognized	UL-Recognition	null
Collector Base capacitance	CCBO	4.5 pF
	@ VCB	10 V
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C