BC857BW
Bipolar Transistors

Product information

Product family Bipolar Transistors
Control and signal processing
Article description BC857BW
BJT, SOT-323, 45V, 100mA, PNP, 0.2W, 150°C
Minimum order quantity 3.000
Stock 36.000
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Technical data

Article number BC857BW
BC857BW Single
Type SMD
Package SOT-323
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 1
 
Collector Emitter voltage VCEO 45 V
DC Collector current IC 100 mA
Polarity pol PNP
Power dissipation Ptot 0.2 W
@ TLoc 25 °C
Location ambient
DC current gain hfe 290
@ VCE 5 V
@ IC 2 mA
DC current gain (b) hfe null
@ VCE null V
@ IC null mA
DC current gain (c) hfe null
@ VCE null V
@ IC null mA
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Peak Collector Current ICM 0.2 A
Peak Base current IBM 200 mA
Collector Base voltage VCBO 50 V
Emitter Base voltage VEBO 5 V
Collector saturation voltage VCEsat 650 mV
@ IC 100 mA
@ IB 5 mA
Base saturation voltage VBEsat 0.7 V
@ IC 10 mA
@ IB 0.5 mA
Base Emitter voltage VBE 0.75 V
Collector Base cutoff current ICBO 15 nA
Emitter Base cutoff current IEBO 100 nA
Gain bandwidth product ft 100 MHz
@ IC 10 mA
@ VCE 5 V
@ f 100 MHz
Marking Marking null
Thermal resistance junction RTH 620 K/W
Location ambient
Thermal resistance junction (b) RTH null K/W
Location null
Net weight mnet 0.01 g
Case flammability UL94-V0 Yes
UL recognized UL-Recognition null
Collector Base capacitance CCBO 4.5 pF
@ VCB 10 V
Storage temperature Tsmin -55 °C
Tsmax 150 °C

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