BC846BP
Bipolar Transistors

Product information

Product family	Bipolar Transistors Control and signal processing
Article description	BC846BP DFN1006-3 BJT, DFN1006-3, 65V, 100mA, NPN, 0.15W, 150°C
Minimum order quantity	10.000
Stock	0
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	BC846BP

Type	SMD
Package	DFN1006-3
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	1

Collector Emitter voltage	VCEO	65 V
DC Collector current	IC	100 mA
Polarity	pol	NPN

Power dissipation	Ptot	0.15 W
	@ TLoc	25 °C
	Location	ambient
DC current gain	hfe	450
	@ VCE	5 V
	@ IC	2 mA
DC current gain (b)	hfe	null
	@ VCE	null V
	@ IC	null mA
DC current gain (c)	hfe	null
	@ VCE	null V
	@ IC	null mA
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Peak Collector Current	ICM	200 A
Peak Base current	IBM	null mA
Collector Base voltage	VCBO	80 V
Emitter Base voltage	VEBO	6 V
Collector saturation voltage	VCEsat	600 mV
	@ IC	100 mA
	@ IB	5 mA
Base saturation voltage	VBEsat	null V
	@ IC	null mA
	@ IB	null mA
Base Emitter voltage	VBE	0.7 V
Collector Base cutoff current	ICBO	15 nA
Emitter Base cutoff current	IEBO	null nA
Gain bandwidth product	ft	300 MHz
	@ IC	10 mA
	@ VCE	5 V
	@ f	1 MHz
Marking	Marking	tbd
Thermal resistance junction	RTH	600 K/W
	Location	ambient
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Net weight	mnet	0.0001 g
Case flammability	UL94-V0	Yes
UL recognized	UL-Recognition	null
Collector Base capacitance	CCBO	6 pF
	@ VCB	10 V
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C